Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites
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Institution:化学与化工学院
Title of Paper:Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites
Journal:NANO ENERGY
First Author:Wang, Zegao
All the Authors:李强
Document Code:1A77BCBE6863402B95BECD71B51A29AB
Volume:49
Page Number:634
Translation or Not:No
Date of Publication:2018-07
Release Time:2019-04-14