location： Current position: Home >> Scientific Research >> Paper Publications

Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites

Hits:

Affiliation of Author(s):化学与化工学院

Journal:NANO ENERGY

All the Authors:liqiang

First Author:Wang, Zegao

Indexed by:Applied Research

Document Code:1A77BCBE6863402B95BECD71B51A29AB

Volume:49

Page Number:634

Translation or Not:no

Date of Publication:2018-07-01

Pre One:The ambipolar transport behavior of WSe2 transistors and its analogue circuits

Next One:RNA nanopatterning on graphene

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep