Li Shuqiang   

Title:Professor

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Patents

Title of Award : 一种GaN HEMTs及降低器件欧姆接触阻值的方法

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Title:一种GaN HEMTs及降低器件欧姆接触阻值的方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202310430500.8

Number of Inventors:8

Service Invention or Not:No

Application Date:2023-04-18

Publication Date:2024-06-11

Authorization Date:2024-06-11

Release Time:2024-06-13

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