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一种基于UDS的KDP晶体表面过饱和度模拟计算方法

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Title:一种基于UDS的KDP晶体表面过饱和度模拟计算方法

Institution:晶体材料研究院(晶体材料全国重点实验室)

Type of Patent:Invent

Application Number:202411015596.2

Number of Inventors:3

Service Invention or Not:No

Application Date:2024-07-26

Publication Date:2025-03-21

Authorization Date:2025-03-21

Release Time:2025-07-09

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