aqPWwREgvkIikRuC9TcWI5sNlBLR3w84Jitse19ricBC9mHLkBtrDU6FbUZ2
Current position: Home >> Scientific Research >> Paper Publications

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

Hits:

Institution:晶体材料研究所

Title of Paper:Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

Journal:AIP Advances

First Author:Duo Liu

Document Code:lw-133488

Translation or Not:No

Date of Publication:2012-01

Release Time:2019-04-13

Prev One:The dielectric and photochromic properties of defect-rich BaTiO3 microcrystallites synthesized from Ti2O3

Next One:Surfactantless photochemical growth of Ag nanostructures on GaN epitaxial films with controlled morphologies and their application for SERS