oJEHFjEon7isOmtWUbXc0TIqrxJe5o4VaSM6iC7KGncIYPiXH8LoG7w4PYn0
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Distinct Photoinduced Wetting Transitions of Differently Doped GaN: An Indication of Collective Behavior

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Institution:晶体材料研究所

Title of Paper:Distinct Photoinduced Wetting Transitions of Differently Doped GaN: An Indication of Collective Behavior

Journal:JOURNAL OF PHYSICAL CHEMISTRY C

First Author:贾冉

All the Authors:李曦,Duo Liu

Document Code:59EEE9A7AADA485E89BF46421BDFEE37

Volume:122

Issue:43

Page Number:24818

Translation or Not:No

Date of Publication:2018-11

Release Time:2019-04-14

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