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一种利用紫外光致亲水性判断HVPE外延生长蓝宝石衬底GaN掺杂类型的方法

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Affilication of Author(s):晶体材料研究所

Patent Applicant:Duo Liu

Type of Patent:发明

Application Number:2016102059329

Number of Inventors:1

Service Invention or Not:no

Application Date:2016-04-05

Publication Date:2018-08-03

Authorization Date:2018-08-03

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