Current position: Home >> Scientific Research >> Patents

基于缺陷诱导的半导体表面高度有序贵金属纳米结构阵列的制备及其应用

Hits:

Affilication of Author(s):晶体材料研究所

Patent Applicant:Duo Liu

Type of Patent:发明

Application Number:2015101279327

Number of Inventors:1

Service Invention or Not:no

Application Date:2015-03-23

Publication Date:2017-01-18

Authorization Date:2017-01-18

Pre One:一种Au/Ga2O3/AuGa2多相复合材料及其制备方法与应用

Next One:一种利用发光二极管阵列实现微悬臂梁高阶共振激发的方法及应用

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:Times MOBILE Version
The Founding Time : ..
The Last Update Time : ..

Mobile phone sweep