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基于缺陷诱导的半导体表面高度有序贵金属纳米结构阵列的制备及其应用

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Affilication of Author(s):晶体材料研究所

Type of Patent:发明

Application Number:2015101279327

Number of Inventors:1

Service Invention or Not:no

Application Date:2015-03-23

Publication Date:2017-01-18

Authorization Date:2017-01-18

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