刘风景
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High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
  • Affiliation of Author(s):
    物理学院
  • Journal:
    《PNAS》
  • Document Code:
    7E346485C6704AE0B2117ABF94A68071
  • Issue:
    120
  • Number of Words:
    8
  • Translation or Not:
    no
  • Date of Publication:
    2023-01-11

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