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High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
  • Institution:
    物理学院
  • Title of Paper:
    High-performance and low-power source-gated transistors enabled by a solution-processed metal oxide homojunction
  • Journal:
    《PNAS》
  • Document Code:
    7E346485C6704AE0B2117ABF94A68071
  • Issue:
    120
  • Number of Words:
    8
  • Translation or Not:
    No
  • Date of Publication:
    2023-01
  • Release Time:
    2023-05-25
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