刘风景
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High Performance and Low Power Source-Gated Transistors Enabled by a Solution-Processed Metal Oxide Homojunction
  • Affiliation of Author(s):
    物理学院
  • Journal:
    《Proc Natl Acad Sci U S A.》
  • First Author:
    庄昕明
  • Document Code:
    9FBE43051EA54322BBEE78FD371C4ECC
  • Issue:
    3
  • Number of Words:
    8000
  • Translation or Not:
    no
  • Date of Publication:
    2023-01-17

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