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Toward High Bias-Stress Stability P-Type GaSb Nanowire Field-Effect-Transistor for Gate-Controlled Near-Infrared Photodetection and Photocommunication
  • Institution:
    物理学院
  • Title of Paper:
    Toward High Bias-Stress Stability P-Type GaSb Nanowire Field-Effect-Transistor for Gate-Controlled Near-Infrared Photodetection and Photocommunication
  • Journal:
    Advanced functional materials
  • Document Code:
    314C533916B0444396DED0A623634621
  • Issue:
    2304064
  • Number of Words:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2023-05
  • Release Time:
    2024-01-16
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