Paper Publications
Title of Award : Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
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Institution:海洋研究院
Title of Paper:Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
Journal:NANO ENERGY
Key Words:ZnO 纳米柱阵列，压电，InSe晶体管压力传感器
First Author:张宇
All the Authors:王建军,王书华,韩琳,刘宏,桑元华,Yu Zhang
Document Code:38BDA9BD4A75448B9AD9E108A3B18866
Page Number:104457
Number of Words:4
Translation or Not:No
Date of Publication:2020-01
Release Time:2020-03-06