Paper Publications
Title of Award : Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
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Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect
Journal:NANO ENERGY
First Author:王孚雷
Document Code:2293F9C42D2445F3952DAA5479EBB20D
Volume:70
Number of Words:5
Translation or Not:No
Date of Publication:2020-04
Release Time:2022-01-18
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