Title : Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

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Affiliation of Author(s):新一代半导体材料研究院

Title of Paper:Two-dimensional wide band-gap nitride semiconductor GaN and AlN materials: properties, fabrication and applications

Journal:Journal of Materials Chemistry C

First Author:王忠新

Document Code:F3FED4C133DB40B3836EECCB275AA9C5

Issue:7

Page Number:17201

Number of Words:8000

Translation or Not:no

Date of Publication:2021-11-03