Home
新型阻变存储器与类脑智能芯片系统设计

该方向致力于阻变存储器(RRAM)/神经形态器件新物理模型与集成新方法的研究,探索可实现异构集成的高性能器件和芯片集成的基础理论和关键技术方法。

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University