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李长峰

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A finite volume element scheme modified with second-order upwind fractional step of three-dimensional semiconductor device transient behavior and its convergence analysis
Release Time:2024-11-30| Hits:

Institution:经济学院
Title of Paper:A finite volume element scheme modified with second-order upwind fractional step of three-dimensional semiconductor device transient behavior and its convergence analysis
Journal:Numerical Methods for Partial Differential Equations
First Author:李长峰
Document Code:C3F480B96D714FF49643CC9A14FA6478
Volume:41
Issue:1
Number of Words:9
Translation or Not:No
Date of Publication:2024-12
Release Time:2024-11-30

Next One:Upwind block-centered multistep differences for semiconductor device problem with heat and magnetic influences

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