Personal Homepage
Login
ICS
Back
中文
Personal Homepage
Login
ICS
Back
中文
Paper Publications
Home
xiaohongdi, luancaina, Ma Jin, linzhaojun, Fujian Zong and Xijian Zhang.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.
Feng Xianjin, xiaohongdi, luancaina, Ma Jin and 赵伟.Deposition and characterization of epitaxial Ta-doped TiO2 films for ultraviolet photoelectric detectors. Ceramics International, 44:21114,2018.
Ma Jin, luancaina, Feng Xianjin and 马瑾.Preparation and characterization of Al2xIn22xO3 films deposited on MgO (10 0) by MOCVDMaterials Research Bulletin,2015.
Ma Jin, Feng Xianjin, xiaohongdi, luancaina and 马瑾.Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVDJournal of crystal growth,2016.
luancaina, hanlin, Feng Xianjin and 徐伟东.High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes. IEEE Electron Device Letters, 40:247,2019.
luancaina, Ma Jin, xiaohongdi and 曹得重.Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors. Photonics research, 6:1144,2018.
luancaina and Ma Jin.Preparation and characterization of single crystalline SnO2 films deposited on TiO2(0 0 1) by MOCVD. Journal of crystal growth, 318:599,2011.
luancaina, Jianqiang Liu, Ma Jin and xiaohongdi.Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers. Journal of Alloys and Compounds, 789:658,2019.
maohongzhi, luancaina, Jianqiang Liu, Ma Jin and xiaohongdi.Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM. Journal of Electronic Materials , 48:3036,2019.
luancaina and 马瑾.Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVDJournal of Materials Science: Materials in Electronics,2016.
total162 10/17
first
previous
next
last
Page