Title : Fabrication, properties, and photodetector of β-(AlxGa1-x)2O3/GaN heteroepitaxial films grown by MOCVD

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Affiliation of Author(s):集成电路学院

Title of Paper:Fabrication, properties, and photodetector of β-(AlxGa1-x)2O3/GaN heteroepitaxial films grown by MOCVD

Journal:Ceramics International

First Author:陈蓉蓉

Document Code:1747174632788680706

Volume:50

Issue:6

Page Number:9363-9371

Number of Words:4000

Translation or Not:no

Date of Publication:2024-01-01