中文

Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers

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  • Institution:微电子学院

  • Title of Paper:Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers

  • Journal:NANOSCALE

  • First Author:曹得重

  • All the Authors:肖洪地,栾彩娜,毛宏志,Jianqiang Liu,刘向东

  • Document Code:D724A0DD21A549D288EB38A47DA64552

  • Volume: 9

  • Issue:32

  • Page Number:11504

  • Translation or Not:No

  • Date of Publication:2017-08

  • Release Time:2019-04-14

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