Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers
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Institution:微电子学院
Title of Paper:Fabrication and improved photoelectrochemical properties of a transferred GaN-based thin film with InGaN/GaN layers
Journal:NANOSCALE
First Author:曹得重
All the Authors:肖洪地,栾彩娜,毛宏志,Jianqiang Liu,刘向东
Document Code:D724A0DD21A549D288EB38A47DA64552
Volume: 9
Issue:32
Page Number:11504
Translation or Not:No
Date of Publication:2017-08
Release Time:2019-04-14