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高质量半绝缘150 mm 4H-SiC 单晶生长研究

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:《人工晶体学报》

  • Key Words:数值模拟;PVT法

  • First Author:彭燕

  • Document Code:C583D59BFC5149418BFCFE93A197334D

  • Issue:5

  • Page Number:1145

  • Translation or Not:no

  • Date of Publication:2016-03-11

  • Date of Publication:2016-03-11
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