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Growth and temperature-depending raman characterization of different nitrogen-doped 4H-SiC crystals

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  • Affiliation of Author(s):晶体材料研究院

  • Journal:Materials Science Forum

  • Key Words:Electric properties;Hall mobility;Nitrogen;Nitrogen compounds;Phonons;Raman scattering;Silicon carbide;Single crystals

  • First Author:杨祥龙

  • Document Code:F5F7E8C04B1C432F83B84D21E4A75475

  • Issue:897

  • Page Number:307

  • Number of Words:2

  • Translation or Not:no

  • Date of Publication:2017-05-15

  • Date of Publication:2017-05-15
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