Growth and temperature-depending raman characterization of different nitrogen-doped 4H-SiC crystals
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Institution:晶体材料研究院（晶体材料全国重点实验室）
Title of Paper:Growth and temperature-depending raman characterization of different nitrogen-doped 4H-SiC crystals
Journal:Materials Science Forum
Key Words:Electric properties;Hall mobility;Nitrogen;Nitrogen compounds;Phonons;Raman scattering;Silicon carbide;Single crystals
First Author:杨祥龙
Document Code:F5F7E8C04B1C432F83B84D21E4A75475
Issue:897
Page Number:307
Number of Words:2
Translation or Not:No
Date of Publication:2017-05
Release Time:2022-10-29
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