International Journal of Thermal Sciences

Ultra-wide bandgap, Transistor-level, Thermal management, Self-heating, Power semiconductor transistor

Power electronics are advancing in efficiency and power density, but high-frequency, miniaturization, and integration introduce novel thermal management challenges. Effective thermal management is crucial to maintaining the efficient operation of semiconductor transistors. As package-level thermal management approaches its heat dissipation limits, transistor-level thermal management near the junction can markedly enhance cooling efficiency, thereby increasing output power density and expanding safe operational margins. Most existing reviews concentrate on package-level thermal management, a comprehensive classification and indepth comparison of transistor-level thermal management aimed at the more microscopic heat transfer process inside the device is limited. Therefore, by analyzing the self-heating mechanism of wide and ultra-wide bandgap power semiconductor transistor, this review paper summarizes the strategy of controlling junction temperature (Tj) from two aspects: junction-to-case thermal resistance (Rth,j-c) and power loss (Ploss). Firstly, different sidecooling methods are commented from the junction and bottom heat transfer paths. On this basis, a large number of complex micro/nano interface impediments to heat transfer are discussed, including the mechanism and modulation methods of interface heat transfer. Transistor design methods for optimizing internal electric field (Efield), specific on-resistance (Ron,sp), and switching characteristics are reviewed, which are feasible and effective for optimizing loss and preventing local hot spot generation. Lastly, we discuss the primary challenges in current strategic development and offer guidance for future advancements in transistor-level thermal management. These proven or unproven concepts hold the promise of extremely efficient thermal management, driving leaps forward in (U)WBG power electronics.

Shilin Dong,Qian Xin,Lin Guo,Xinyu Wang,Ning Qin,Xin Lan,Chunsheng Guo,Wei Wang

Guangzheng Zhang

Journal paper

Gongming Xin,Bing-yang Cao

110200

219

no

SCI