论文成果
Transistor-level thermal management in wide and ultra-wide bandgap power semiconductor transistors: A review
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发表刊物：
International Journal of Thermal Sciences
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关键字：
Ultra-wide bandgap, Transistor-level, Thermal management, Self-heating, Power semiconductor transistor
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摘要：
Power electronics are advancing in efficiency and power density, but high-frequency, miniaturization, and integration introduce novel thermal management challenges. Effective thermal management is crucial to maintaining the efficient operation of semiconductor transistors. As package-level thermal management approaches its heat dissipation limits, transistor-level thermal management near the junction can markedly enhance cooling efficiency, thereby increasing output power density and expanding safe operational margins. Most existing reviews concentrate on package-level thermal management, a comprehensive classification and indepth
comparison of transistor-level thermal management aimed at the more microscopic heat transfer process inside the device is limited. Therefore, by analyzing the self-heating mechanism of wide and ultra-wide bandgap power semiconductor transistor, this review paper summarizes the strategy of controlling junction temperature
(Tj) from two aspects: junction-to-case thermal resistance (Rth,j-c) and power loss (Ploss). Firstly, different sidecooling methods are commented from the junction and bottom heat transfer paths. On this basis, a large number of complex micro/nano interface impediments to heat transfer are discussed, including the mechanism and modulation methods of interface heat transfer. Transistor design methods for optimizing internal electric field (Efield), specific on-resistance (Ron,sp), and switching characteristics are reviewed, which are feasible and effective for optimizing loss and preventing local hot spot generation. Lastly, we discuss the primary challenges in current strategic development and offer guidance for future advancements in transistor-level thermal management. These proven or unproven concepts hold the promise of extremely efficient thermal management, driving leaps forward in (U)WBG power electronics.
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全部作者：
Shilin Dong,Qian Xin,Lin Guo,Xinyu Wang,Ning Qin,Xin Lan,Chunsheng Guo,Wei Wang
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第一作者：
Guangzheng Zhang
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论文类型：
期刊论文
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通讯作者：
Gongming Xin,Bing-yang Cao
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论文编号：
110200
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期号：
219
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是否译文：
否
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发表时间：
2025-08-01
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收录刊物：
SCI
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