sangyuanhua

Doctor

Postgraduate (Postdoctoral)

山东大学

Personal Information

Gender:Male
Date of Employment:2012-07-19
Business Address:山大南路27号功能晶体材料楼204室

VIEW MORE

Other Contact Information

Email :

PostalAddress :

ZipCode :


Home > Scientific Research > Paper Publications

Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect

Release Time:2020-03-06 Hits:

Institution:海洋研究院
Journal:NANO ENERGY
Key Words:ZnO 纳米柱阵列，压电，InSe晶体管压力传感器
First Author:张宇
All the Authors:王建军,王书华,韩琳,刘宏,桑元华,Yu Zhang
Document Code:38BDA9BD4A75448B9AD9E108A3B18866
Page Number:104457
Number of Words:4
Translation or Not:No
Date of Publication:2020-01

Prev One:Cellular Stemness Maintenance of Human Adipose-Derived Stem Cells on ZnO Nanorod Arrays

Next One:An earth-abundant and multifunctional Ni nanosheets array as electrocatalysts and heat absorption layer integrated thermoelectric device for overall water splitting

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:  | The Last Update Time:..  | Login | SDU