sangyuanhua

Doctor

Postgraduate (Postdoctoral)

山东大学

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Gender:Male
Date of Employment:2012-07-19
Business Address:山大南路27号功能晶体材料楼204室

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Home > Scientific Research > Paper Publications

Piezopotential gated two-dimensional InSe field-effect transistor for designing a pressure sensor based on piezotronic effect

Release Time:2022-01-18 Hits:

Institution:晶体材料研究院(晶体材料全国重点实验室)
Journal:NANO ENERGY
First Author:王孚雷
Document Code:2293F9C42D2445F3952DAA5479EBB20D
Volume:70
Number of Words:5
Translation or Not:No
Date of Publication:2020-04