Affiliation of Author(s): : 微电子学院

Title of Paper: : GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric

Journal: : Semiconductor Science and Technology

All the Authors: : Yiming Wang,xinqian,xumingsheng,chenxiufang,xuxiangang,fengxianjin,Song A M

First Author: : 朱庚昌

Indexed by: : Unit Twenty Basic Research

Document Code: : 600382F594C94DF2908CDF75E37699EF

Volume: : 33

Issue: : 9

Translation or Not: : no

Date of Publication: : 2018-09-01