Institution:微电子学院
Title of Paper:GaN metal-oxide-semiconductor high-electron-mobility transistors using thermally evaporated SiO as the gate dielectric
Journal:Semiconductor Science and Technology
First Author:朱庚昌
All the Authors:王一鸣,辛倩,徐明升,陈秀芳,徐现刚,冯先进,Song A M
Document Code:600382F594C94DF2908CDF75E37699EF
Volume:33
Issue:9
Translation or Not:No
Date of Publication:2018-09
Release Time:2019-06-07
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Faculty/School : School of Integrated Circuits,Shandong University
Business Address : 软件园校区
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