山东大学教师主页 Song A M Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation Home

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Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation

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Institution:集成电路学院

Title of Paper:Performance enhancement of AlGaN/AlN/GaN high electron mobility transistors by thermally evaporated SiO passivation

Journal:APPLIED PHYSICS LETTERS

First Author:朱庚昌

All the Authors:王一鸣,冯先进,Song A M

Document Code:lw-178680

Volume:109

Issue:11

Page Number:113503

Number of Words:3

Translation or Not:No

Date of Publication:2016-09

Release Time:2019-10-27

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Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Alma Mater : 山东大学

Education Level : Postgraduate (Doctoral)

Degree : Doctor

Status : Employed

School/Department : 集成电路学院

Faculty/School : School of Integrated Circuits,Shandong University

Business Address : 软件园校区

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