Song A M
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Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
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Affiliation of Author(s): : 微电子学院

Title of Paper: : Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel

Journal: : SEMICONDUCTOR SCIENCE AND TECHNOLOGY

First Author: : 马鹏飞

Indexed by: : Applied Research

Document Code: : ED7FB9B9098F4949949DD0339CBED711

Volume: : 35

Issue: : 5

Translation or Not: : no

Date of Publication: : 2020-04-09

Personal information

Professor
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Gender : Male

Alma Mater : 山东大学

Education Level : Postgraduate (Doctoral)

Degree : Doctor

Status : Employed

School/Department : 微电子学院

Business Address : 软件园校区

Email : songam@sdu.edu.cn

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