Institution:集成电路学院
Title of Paper:Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
Journal:SEMICONDUCTOR SCIENCE AND TECHNOLOGY
First Author:马鹏飞
Document Code:ED7FB9B9098F4949949DD0339CBED711
Volume:35
Issue:5
Number of Words:5
Translation or Not:No
Date of Publication:2020-04
Release Time:2020-06-05
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Faculty/School : School of Integrated Circuits,Shandong University
Business Address : 软件园校区
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