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Extremely high-gain source-gated transistors
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Institution:集成电路学院

Title of Paper:Extremely high-gain source-gated transistors

Journal:PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

First Author:张嘉炜

Document Code:5837A7A20E1B44CE944CC0C0DB87B0CB

Volume:116

Issue:11

Page Number:4843

Number of Words:5000

Translation or Not:No

Date of Publication:2019-03

Release Time:2021-10-09

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Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Alma Mater : 山东大学

Education Level : Postgraduate (Doctoral)

Degree : Doctor

Status : Employed

School/Department : 集成电路学院

Faculty/School : School of Integrated Circuits,Shandong University

Business Address : 软件园校区

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