Institution:集成电路学院
Title of Paper:Charge-trapping memory based on tri-layer alumina gate stack and InGaZnO channel
Journal:SEMICONDUCTOR SCIENCE AND TECHNOLOGY
First Author:马鹏飞
Document Code:419298800B7E4787B96E7EF0679BE71C
Volume:35
Issue:5
Number of Words:5000
Translation or Not:No
Date of Publication:2020-05
Release Time:2022-01-18
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Faculty/School : School of Integrated Circuits,Shandong University
Business Address : 软件园校区
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