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High performance InGaZnO-based Schottky diodes fabricated at room temperature
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Institution:集成电路学院

Title of Paper:High performance InGaZnO-based Schottky diodes fabricated at room temperature

Journal:the 17th International Conference on II-VI Compounds and Related Materials (II-VI 2015)

First Author:严林龙

Document Code:lw-180407

Number of Words:4500

Translation or Not:No

Date of Publication:2015-09

Release Time:2022-11-17

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Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Alma Mater : 山东大学

Education Level : Postgraduate (Doctoral)

Degree : Doctor

Status : Employed

School/Department : 集成电路学院

Faculty/School : School of Integrated Circuits,Shandong University

Business Address : 软件园校区

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