Affiliation of Author(s): : 微电子学院

Title of Paper: : Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction

Journal: : IEEE Electron Device Letters

Key Words: : Alumina;Aluminum oxide;Field effect transistors;Gallium compounds;Heterojunctions;II-VI semiconductors;Nanosheets;Semiconducting indium compounds;Zinc oxide;Back channels;Filed-effect-transistor;Gallium oxide (ga2o3);High mobility;Mobility (μ);Mode operation;Nano sheet;P-n heterojunctions;p-Type SnO;Threshold voltage (VTH);Gallium oxide (Ga2O3);filed-effecttransistors (FETs);heterojunction;threshold voltage (V-TH);p-type SnO;mobility (mu)

First Author: : 王珣珣

Document Code: : 1478204783637565441

Volume: : 43

Issue: : 1

Page Number: : 44-47

Number of Words: : 5

Translation or Not: : no

Date of Publication: : 2022-01-01