Institution:集成电路学院
Title of Paper:Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction
Journal:IEEE Electron Device Letters
Key Words:Alumina;Aluminum oxide;Field effect transistors;Gallium compounds;Heterojunctions;II-VI semiconductors;Nanosheets;Semiconducting indium compounds;Zinc oxide;Back channels;Filed-effect-transistor;Gallium oxide (ga2o3);High mobility;Mobility (μ);Mode operation;Nano sheet;P-n heterojunctions;p-Type SnO;Threshold voltage (VTH);Gallium oxide (Ga2O3);filed-effecttransistors (FETs);heterojunction;threshold voltage (V-TH);p-type SnO;mobility (mu)
First Author:王珣珣
Document Code:1478204783637565441
Volume:43
Issue:1
Page Number:44-47
Number of Words:5
Translation or Not:No
Date of Publication:2022-01
Release Time:2023-07-19
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Faculty/School : School of Integrated Circuits,Shandong University
Business Address : 软件园校区
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