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Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions
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Institution:集成电路学院

Title of Paper:Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions

Journal:IEEE Transactions on Electron Devices

Document Code:A463292AAD9345A8873E96D117A76844

Issue:4

Page Number:1377

Number of Words:5000

Translation or Not:No

Date of Publication:2018-03

Release Time:2023-11-02

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Supervisor of Doctorate Candidates
Supervisor of Master's Candidates

Alma Mater : 山东大学

Education Level : Postgraduate (Doctoral)

Degree : Doctor

Status : Employed

School/Department : 集成电路学院

Faculty/School : School of Integrated Circuits,Shandong University

Business Address : 软件园校区

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