Title: : 一种优化基于氧化物半导体的CMOS反相器门限电压的方法
Affilication of Author(s): : 微电子学院
Patent Applicant: : xinqian,Song A M
Type of Patent: : 发明
Application Number: : 2018110099435
Number of Inventors: : 2
Service Invention or Not: : no
Application Date: : 2018-08-31
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Business Address : 软件园校区
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