Title:一种优化基于氧化物半导体的CMOS反相器门限电压的方法
Institution:微电子学院
Type of Patent:发明
Application Number:2018110099435
Number of Inventors:2
Service Invention or Not:No
Application Date:2018-08-31
Release Time:2019-04-15
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Faculty/School : School of Integrated Circuits,Shandong University
Business Address : 软件园校区
Email :
Email :
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