Title:一种氢离子浓度传感器芯片及其制备方法与应用
Institution:集成电路学院
Type of Patent:Invent
Application Number:201910508807.9
Number of Inventors:2
Service Invention or Not:No
Application Date:2019-06-13
Publication Date:2021-10-26
Authorization Date:2021-10-26
Release Time:2021-11-02
Supervisor of Doctorate Candidates
Supervisor of Master's Candidates
Alma Mater : 山东大学
Education Level : Postgraduate (Doctoral)
Degree : Doctor
Status : Employed
School/Department : 集成电路学院
Faculty/School : School of Integrated Circuits,Shandong University
Business Address : 软件园校区
Email :
Email :
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