Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors
发布时间：2022-05-24 点击数：
所属单位：集成电路学院
论文名称：Comparative Study of Short-Channel Effects Between Source-Gated Transistors and Standard Thin-Film Transistors
发表刊物：IEEE Transactions on Electron Devices
第一作者：王震泽
论文编号：EE891ACF871F4DC799BF2F59A5BD422D
卷号：69
期号：2
页面范围：561
字数：3000
是否译文：否
发表时间：2022-01