Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction
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所属单位：微电子学院
发表刊物：IEEE Electron Device Letters
关键字：Alumina;Aluminum oxide;Field effect transistors;Gallium compounds;Heterojunctions;II-VI semiconductors;Nanosheets;Semiconducting indium compounds;Zinc oxide;Back channels;Filed-effect-transistor;Gallium oxide (ga2o3);High mobility;Mobility (μ);Mode operation;Nano sheet;P-n heterojunctions;p-Type SnO;Threshold voltage (VTH);Gallium oxide (Ga2O3);filed-effecttransistors (FETs);heterojunction;threshold voltage (V-TH);p-type SnO;mobility (mu)
第一作者：王珣珣
论文编号：1478204783637565441
卷号：43
期号：1
页面范围：44-47
字数：5
是否译文：否
发表时间：2022-01-01
发表时间：2022-01-01