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Ga2O3 Field-Effect-Transistor-Based Solar-Blind Photodetector With Fast Response and High Photo-to-Dark Current Ratio
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    刘雅璇
  • All the Authors:
    辛倩,Xutang Tao,Song A M,Zhitai Jia,徐明升
  • Document Code:
    66B4D67ADAA14F45A7151DDCA11B3602
  • Volume:
    39
  • Issue:
    11
  • Page Number:
    1696
  • Number of Words:
    4
  • Translation or Not:
    No
  • Date of Publication:
    2018-10
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