High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

Release time:2019-10-24|Hits:

Affiliation of Author(s):集成电路学院

Journal:IEEE Electron Device Letters

All the Authors:Xutang Tao,Song A M,xinqian,xumingsheng,Wenxiang Mu,Wang Xinyu,xingongming,Zhitai Jia

First Author:杜路路

Document Code:95E46522A7424B49812ABB6DBA13307C

Volume:40

Issue:3

Page Number:451

Translation or Not:no

Date of Publication:2019-03-01