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High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact
Release Time:2019-10-24
  • Institution:
    集成电路学院
  • Journal:
    IEEE Electron Device Letters
  • First Author:
    杜路路
  • All the Authors:
    Song A M,辛倩,徐明升,Wenxiang Mu,王鑫煜,辛公明,Zhitai Jia,Xutang Tao
  • Document Code:
    95E46522A7424B49812ABB6DBA13307C
  • Volume:
    40
  • Issue:
    3
  • Page Number:
    451
  • Translation or Not:
    No
  • Date of Publication:
    2019-03
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