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Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode
Release Time:2019-10-25
  • Institution:
    集成电路学院
  • Journal:
    Semiconductor Science and Technology
  • First Author:
    辛倩
  • All the Authors:
    徐明升,Wenxiang Mu,Zhitai Jia,王鑫煜,辛公明,Xutang Tao,Song A M,辛倩
  • Document Code:
    343681EE28154666B317A53CC22C80CE
  • Issue:
    34
  • Number of Words:
    4500
  • Translation or Not:
    No
  • Date of Publication:
    2019-06
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