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Achieving high performance Ga2O3 diodes by adjusting chemical composition of tin oxide Schottky electrode

Release time:2019-10-25|Hits:

Affiliation of Author(s):集成电路学院

Journal:Semiconductor Science and Technology

All the Authors:xinqian,Xutang Tao,Song A M,xumingsheng,Wenxiang Mu,Zhitai Jia,Wang Xinyu,xingongming

First Author:辛倩

Document Code:343681EE28154666B317A53CC22C80CE

Issue:34

Number of Words:4500

Translation or Not:no

Date of Publication:2019-06-06

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Solid–liquid interface optimization and properties of ultra-wide bandgap β-Ga2O3 grown by Czochralski and EFG methods
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