Paper Publications
A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
Release Time:2019-10-25
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Institution:
晶体材料研究院（晶体材料全国重点实验室）
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Journal:
Journal of Semiconductors
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First Author:
付博
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All the Authors:
Wenxiang Mu,尹延如,张健,Xutang Tao,Zhitai Jia
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Document Code:
8731C0AB390E416686F784839D156A8B
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Number of Words:
4000
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Translation or Not:
No
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Date of Publication:
2019-04
