Enhancement-Mode Ga2O3 FET With High Mobility Using p-Type SnO Heterojunction

Release time:2022-11-15|Hits:

Affiliation of Author(s):微电子学院

Journal:IEEE Electron Device Letters

First Author:王珣珣

Document Code:94A89A91EBFE4CEA8315878F2988EA0A

Volume:43

Issue:1

Page Number:44

Number of Words:4500

Translation or Not:no

Date of Publication:2022-01-01