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Rapid epitaxy of 2-inch and high-quality α-Ga2O3 films by Mist-CVD method

Release time:2023-05-18|Hits:

Affiliation of Author(s):新一代半导体材料研究院

Journal:Journal of Semiconductors

First Author:王晓杰

Document Code:131FF0B9E69B46ADB8D020C55131783B

Issue:44

Number of Words:7

Translation or Not:no

Date of Publication:2023-04-03

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Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (100) surface
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Growth and characterization of the β-Ga2O3 (011) plane without line-shaped defects

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