Paper Publications
Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction
Release Time:2023-07-19
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Institution:
集成电路学院
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Journal:
IEEE Electron Device Letters
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Key Words:
Alumina;Aluminum oxide;Field effect transistors;Gallium compounds;Heterojunctions;II-VI semiconductors;Nanosheets;Semiconducting indium compounds;Zinc oxide;Back channels;Filed-effect-transistor;Gallium oxide (ga2o3);High mobility;Mobility (μ);Mode operation;Nano sheet;P-n heterojunctions;p-Type SnO;Threshold voltage (VTH);Gallium oxide (Ga2O3);filed-effecttransistors (FETs);heterojunction;threshold voltage (V-TH);p-type SnO;mobility (mu)
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First Author:
王珣珣
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Document Code:
1478204783637565441
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Volume:
43
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Issue:
1
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Page Number:
44-47
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Number of Words:
5
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Translation or Not:
No
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Date of Publication:
2022-01
