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Hysteresis-free and μ s-switching of D/E-modes Ga2O3hetero-junction FETs with the BV2/Ron,spof 0.74/0.28 GW/cm2

Release time:2024-10-15|Hits:

Affiliation of Author(s):新一代半导体材料研究院

Journal:APPLIED PHYSICS LETTERS

First Author:Wang, Chenlu

Document Code:1541718969515261953

Volume:120

Issue:11

Number of Words:5000

Translation or Not:no

Date of Publication:2022-03-14

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Investigation of the blue color center in beta-Ga2O3 crystals by the EFG method
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Ammonia Electrosynthesis with a Stable Metal-Free 2D Silicon Phosphide Catalyst

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