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Hysteresis-free and μ s-switching of D/E-modes Ga2O3hetero-junction FETs with the BV2/Ron,spof 0.74/0.28 GW/cm2
Release Time:2024-10-15
  • Institution:
    新一代半导体材料研究院
  • Journal:
    APPLIED PHYSICS LETTERS
  • First Author:
    Wang, Chenlu
  • Document Code:
    1541718969515261953
  • Volume:
    120
  • Issue:
    11
  • Number of Words:
    5000
  • Translation or Not:
    No
  • Date of Publication:
    2022-03
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