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Solid-liquid interface optimization and properties of ultra-wide bandgap β-Ga2O3 grown by Czochralski and EFG methods

Release time:2024-10-15|Hits:

Affiliation of Author(s):新一代半导体材料研究院

Journal:CrystEngComm

Key Words:Carrier concentration;Crystal growth;Crystal impurities;Crystal structure;Crystallization;Galerkin methods;Gallium compounds;Heat transfer;Liquids

First Author:穆文祥

Document Code:1395293011256020994

Volume:21

Issue:17

Page Number:2762-2767

Number of Words:5000

Translation or Not:no

Date of Publication:2019-01-01

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Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (1 0 0) surface
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Broadband near-infrared Cr3+:β-Ga2O3fluorescent single crystal grown by the EFG method

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