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4英寸氧化镓单晶生长与性能

Release time:2024-10-15|Hits:

Affiliation of Author(s):新一代半导体材料研究院

Journal:《人工晶体学报》

First Author:穆文祥

Document Code:1575306206225580033

Volume:51

Issue:Z1

Page Number:1-5

Translation or Not:no

Date of Publication:2022-08-31

Pre One:: Pt/ZnGa<sub>2</sub>O<sub>4</sub> Schottky Barrier Diodes Fabricated by Using Single Crystal n-ZnGa<sub>2</sub>O<sub>4</sub> (111) Substrates

Next One:: Efficient Suppression of Persistent Photoconductivity in ss-Ga2O3-Based Photodetectors with Square Nanopore Arrays