一种卤化亚汞单晶体的生长装置

Release time:2019-04-15|Hits:

Affilication of Author(s):晶体材料研究所

Patent Applicant:zhangguodong,Xutang Tao

Type of Patent:实用新型

Application Number:2018209068164

Number of Inventors:2

Service Invention or Not:no

Application Date:2018-06-12

Publication Date:2019-02-26

Authorization Date:2019-02-26