磷硅镉多晶料的双温区合成方法及装置

Release time:2019-04-15|Hits:

Affilication of Author(s):晶体材料研究所

Patent Applicant:Xutang Tao

Type of Patent:发明

Application Number:201110083468.8

Number of Inventors:1

Service Invention or Not:no

Application Date:2011-04-02

Publication Date:2012-07-04

Authorization Date:2012-07-04