Affilication of Author(s):晶体材料研究所
Patent Applicant:Xutang Tao
Type of Patent:发明
Application Number:2018106011050
Number of Inventors:2
Service Invention or Not:no
Application Date:2018-06-12
Xutang Tao
Professor
No content
Patents
一种卤化亚汞单晶体的生长装置及方法
Release time:2019-04-15|Hits:
- Pre One:
- 掺镱钙铌石榴石晶体及激光器件
- Next One:
- 一种高优值的高温热电材料Ca(Zn(1-x)2Agx-σ)Sb及其制备方法