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基于离子注入技术修饰的全单晶光纤、制备方法及其数值孔径调控和应用
Release Time:2022-02-17
  • Institution:
    晶体材料研究院（晶体材料全国重点实验室）
  • Type of Patent:
    Invent
  • Application Number:
    202011207882.0
  • Number of Inventors:
    3
  • Service Invention or Not:
    No
  • Publication Date:
    2022-02-11
  • Authorization Date:
    2022-02-11
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